Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)
A 180-nm-thick boron (B) layer was deposited on a 300-nm-thick a-axis-oriented BaSi2 epitaxial film grown by molecular beam epitaxy on Si(111) and was annealed at different temperatures in ultrahigh vacuum. The depth profiles of B were investigated using secondary ion mass spectrometry (SIMS) with O...
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| Veröffentlicht in: | Journal of applied physics 2013-02, Vol.113 (5) |
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| container_title | Journal of applied physics |
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| creator | Nakamura, K. Baba, M. Ajmal Khan, M. Du, W. Sasase, M. Hara, K. O. Usami, N. Toko, K. Suemasu, T. |
| description | A 180-nm-thick boron (B) layer was deposited on a 300-nm-thick
a-axis-oriented BaSi2
epitaxial film
grown by
molecular beam
epitaxy on Si(111) and was annealed at different temperatures in ultrahigh vacuum. The
depth profiles of B were investigated using secondary ion mass spectrometry
(SIMS) with
O2+, and the diffusion coefficients of B were evaluated. The B profiles were
reproduced well by taking both the lattice and the grain boundary
(GB)
diffusions
into consideration. The cross-sectional transmission electron microscopy
(TEM) image
revealed that the GBs of the BaSi2 film were very sharp and normal to the
sample surface. The plan-view TEM image exhibited that the grain size of the BaSi2 film
was approximately 0.6 μm. The temperature dependence of lattice and
GB
diffusion
coefficients was derived from the SIMS profiles, and their activation energies were found to be 4.6 eV
and 4.4 eV, respectively. |
| doi_str_mv | 10.1063/1.4790597 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4790597</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1323232474</sourcerecordid><originalsourceid>FETCH-LOGICAL-c477t-e51c1ddf0686e5b6e34c85f38f46dd151a47cc710aae32c14348ff78b2a9400d3</originalsourceid><addsrcrecordid>eNqd0E1LxDAQBuAgCq6rB_9BjrtC10yTNulRF7-g4GEVvIU0HxLpNjVpRf-9XXbBu8xhDvMw8L4IXQJZASnpNawYr0hR8SM0AyKqjBcFOUYzQnLIRMWrU3SW0gchAIJWM_RWq2Hw2mLVGfwele-yJoydUfEHG-_cmHzoEg4ONyGGDqshbBP2Hb5VG59j2_tBfXvVYufb6TCJjV8AwPIcnTjVJntx2HP0en_3sn7M6ueHp_VNnWnG-ZDZAjQY40gpSls0paVMi8JR4VhpDBSgGNeaA1HK0lwDo0w4x0WTq4oRYugcLfZ_-xg-R5sGufVJ27ZVnQ1jkkDz3TDOJrrcUx1DStE62Ue_nZJKIHLXngR5aG-yV3ub9JRwmEr4H_4K8Q_K3jj6C-1vfJM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1323232474</pqid></control><display><type>article</type><title>Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Nakamura, K. ; Baba, M. ; Ajmal Khan, M. ; Du, W. ; Sasase, M. ; Hara, K. O. ; Usami, N. ; Toko, K. ; Suemasu, T.</creator><creatorcontrib>Nakamura, K. ; Baba, M. ; Ajmal Khan, M. ; Du, W. ; Sasase, M. ; Hara, K. O. ; Usami, N. ; Toko, K. ; Suemasu, T.</creatorcontrib><description>A 180-nm-thick boron (B) layer was deposited on a 300-nm-thick
a-axis-oriented BaSi2
epitaxial film
grown by
molecular beam
epitaxy on Si(111) and was annealed at different temperatures in ultrahigh vacuum. The
depth profiles of B were investigated using secondary ion mass spectrometry
(SIMS) with
O2+, and the diffusion coefficients of B were evaluated. The B profiles were
reproduced well by taking both the lattice and the grain boundary
(GB)
diffusions
into consideration. The cross-sectional transmission electron microscopy
(TEM) image
revealed that the GBs of the BaSi2 film were very sharp and normal to the
sample surface. The plan-view TEM image exhibited that the grain size of the BaSi2 film
was approximately 0.6 μm. The temperature dependence of lattice and
GB
diffusion
coefficients was derived from the SIMS profiles, and their activation energies were found to be 4.6 eV
and 4.4 eV, respectively.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4790597</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><subject>Barium compounds ; Diffusion ; Disilicides ; Intermetallics ; Lattices ; Secondary ion mass spectrometry ; Semiconductors</subject><ispartof>Journal of applied physics, 2013-02, Vol.113 (5)</ispartof><rights>American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c477t-e51c1ddf0686e5b6e34c85f38f46dd151a47cc710aae32c14348ff78b2a9400d3</citedby><cites>FETCH-LOGICAL-c477t-e51c1ddf0686e5b6e34c85f38f46dd151a47cc710aae32c14348ff78b2a9400d3</cites><orcidid>0000-0002-5171-6215</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4790597$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4497,27903,27904,76131,76137</link.rule.ids></links><search><creatorcontrib>Nakamura, K.</creatorcontrib><creatorcontrib>Baba, M.</creatorcontrib><creatorcontrib>Ajmal Khan, M.</creatorcontrib><creatorcontrib>Du, W.</creatorcontrib><creatorcontrib>Sasase, M.</creatorcontrib><creatorcontrib>Hara, K. O.</creatorcontrib><creatorcontrib>Usami, N.</creatorcontrib><creatorcontrib>Toko, K.</creatorcontrib><creatorcontrib>Suemasu, T.</creatorcontrib><title>Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)</title><title>Journal of applied physics</title><description>A 180-nm-thick boron (B) layer was deposited on a 300-nm-thick
a-axis-oriented BaSi2
epitaxial film
grown by
molecular beam
epitaxy on Si(111) and was annealed at different temperatures in ultrahigh vacuum. The
depth profiles of B were investigated using secondary ion mass spectrometry
(SIMS) with
O2+, and the diffusion coefficients of B were evaluated. The B profiles were
reproduced well by taking both the lattice and the grain boundary
(GB)
diffusions
into consideration. The cross-sectional transmission electron microscopy
(TEM) image
revealed that the GBs of the BaSi2 film were very sharp and normal to the
sample surface. The plan-view TEM image exhibited that the grain size of the BaSi2 film
was approximately 0.6 μm. The temperature dependence of lattice and
GB
diffusion
coefficients was derived from the SIMS profiles, and their activation energies were found to be 4.6 eV
and 4.4 eV, respectively.</description><subject>Barium compounds</subject><subject>Diffusion</subject><subject>Disilicides</subject><subject>Intermetallics</subject><subject>Lattices</subject><subject>Secondary ion mass spectrometry</subject><subject>Semiconductors</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqd0E1LxDAQBuAgCq6rB_9BjrtC10yTNulRF7-g4GEVvIU0HxLpNjVpRf-9XXbBu8xhDvMw8L4IXQJZASnpNawYr0hR8SM0AyKqjBcFOUYzQnLIRMWrU3SW0gchAIJWM_RWq2Hw2mLVGfwele-yJoydUfEHG-_cmHzoEg4ONyGGDqshbBP2Hb5VG59j2_tBfXvVYufb6TCJjV8AwPIcnTjVJntx2HP0en_3sn7M6ueHp_VNnWnG-ZDZAjQY40gpSls0paVMi8JR4VhpDBSgGNeaA1HK0lwDo0w4x0WTq4oRYugcLfZ_-xg-R5sGufVJ27ZVnQ1jkkDz3TDOJrrcUx1DStE62Ue_nZJKIHLXngR5aG-yV3ub9JRwmEr4H_4K8Q_K3jj6C-1vfJM</recordid><startdate>20130207</startdate><enddate>20130207</enddate><creator>Nakamura, K.</creator><creator>Baba, M.</creator><creator>Ajmal Khan, M.</creator><creator>Du, W.</creator><creator>Sasase, M.</creator><creator>Hara, K. O.</creator><creator>Usami, N.</creator><creator>Toko, K.</creator><creator>Suemasu, T.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5171-6215</orcidid></search><sort><creationdate>20130207</creationdate><title>Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)</title><author>Nakamura, K. ; Baba, M. ; Ajmal Khan, M. ; Du, W. ; Sasase, M. ; Hara, K. O. ; Usami, N. ; Toko, K. ; Suemasu, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c477t-e51c1ddf0686e5b6e34c85f38f46dd151a47cc710aae32c14348ff78b2a9400d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Barium compounds</topic><topic>Diffusion</topic><topic>Disilicides</topic><topic>Intermetallics</topic><topic>Lattices</topic><topic>Secondary ion mass spectrometry</topic><topic>Semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakamura, K.</creatorcontrib><creatorcontrib>Baba, M.</creatorcontrib><creatorcontrib>Ajmal Khan, M.</creatorcontrib><creatorcontrib>Du, W.</creatorcontrib><creatorcontrib>Sasase, M.</creatorcontrib><creatorcontrib>Hara, K. O.</creatorcontrib><creatorcontrib>Usami, N.</creatorcontrib><creatorcontrib>Toko, K.</creatorcontrib><creatorcontrib>Suemasu, T.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakamura, K.</au><au>Baba, M.</au><au>Ajmal Khan, M.</au><au>Du, W.</au><au>Sasase, M.</au><au>Hara, K. O.</au><au>Usami, N.</au><au>Toko, K.</au><au>Suemasu, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)</atitle><jtitle>Journal of applied physics</jtitle><date>2013-02-07</date><risdate>2013</risdate><volume>113</volume><issue>5</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>A 180-nm-thick boron (B) layer was deposited on a 300-nm-thick
a-axis-oriented BaSi2
epitaxial film
grown by
molecular beam
epitaxy on Si(111) and was annealed at different temperatures in ultrahigh vacuum. The
depth profiles of B were investigated using secondary ion mass spectrometry
(SIMS) with
O2+, and the diffusion coefficients of B were evaluated. The B profiles were
reproduced well by taking both the lattice and the grain boundary
(GB)
diffusions
into consideration. The cross-sectional transmission electron microscopy
(TEM) image
revealed that the GBs of the BaSi2 film were very sharp and normal to the
sample surface. The plan-view TEM image exhibited that the grain size of the BaSi2 film
was approximately 0.6 μm. The temperature dependence of lattice and
GB
diffusion
coefficients was derived from the SIMS profiles, and their activation energies were found to be 4.6 eV
and 4.4 eV, respectively.</abstract><doi>10.1063/1.4790597</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-5171-6215</orcidid><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Barium compounds Diffusion Disilicides Intermetallics Lattices Secondary ion mass spectrometry Semiconductors |
| title | Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111) |
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