Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)
A 180-nm-thick boron (B) layer was deposited on a 300-nm-thick a-axis-oriented BaSi2 epitaxial film grown by molecular beam epitaxy on Si(111) and was annealed at different temperatures in ultrahigh vacuum. The depth profiles of B were investigated using secondary ion mass spectrometry (SIMS) with O...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2013-02, Vol.113 (5) |
---|---|
Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A 180-nm-thick boron (B) layer was deposited on a 300-nm-thick
a-axis-oriented BaSi2
epitaxial film
grown by
molecular beam
epitaxy on Si(111) and was annealed at different temperatures in ultrahigh vacuum. The
depth profiles of B were investigated using secondary ion mass spectrometry
(SIMS) with
O2+, and the diffusion coefficients of B were evaluated. The B profiles were
reproduced well by taking both the lattice and the grain boundary
(GB)
diffusions
into consideration. The cross-sectional transmission electron microscopy
(TEM) image
revealed that the GBs of the BaSi2 film were very sharp and normal to the
sample surface. The plan-view TEM image exhibited that the grain size of the BaSi2 film
was approximately 0.6 μm. The temperature dependence of lattice and
GB
diffusion
coefficients was derived from the SIMS profiles, and their activation energies were found to be 4.6 eV
and 4.4 eV, respectively. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4790597 |