Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers

We report on the analyses of trapping properties of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures on silicon with increasing buffer thickness (Tbuff). An exact exponential dependence of AlGaN/GaN hetero-interface trap time constants...

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Veröffentlicht in:Applied physics letters 2012-07, Vol.101 (1)
Hauptverfasser: Freedsman, Joseph J., Kubo, Toshiharu, Egawa, Takashi
Format: Artikel
Sprache:eng
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Zusammenfassung:We report on the analyses of trapping properties of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures on silicon with increasing buffer thickness (Tbuff). An exact exponential dependence of AlGaN/GaN hetero-interface trap time constants with gate bias was observed in the vicinity of threshold voltage. A low hetero-interface state density (Dit) value of ∼2.5 × 1010 cm−2 eV−1 was achieved for heterostructures grown by using thick Tbuff ∼ 5 μm against a Dit value of ∼1 × 1011 cm−2 eV−1 for a similar heterostructures grown with thin Tbuff ∼ 1.25 μm. Further, the high resolution x-ray rocking curve and Van der Pauw-Hall measurements also confirmed that increasing the Tbuff improves the AlGaN/GaN HEMT heterostructures with reduced edge dislocation densities and enhanced carrier transport properties.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4733359