Kinetic behavior of nitrogen penetration into indium double layer improving the smoothness of InN film

The kinetic process of the formation of InN thin film was clarified via the investigation of the layer-by-layer deposition on (0001) surface, by first-principles calculations. Site selection and diffusion behavior of In and N adatoms revealed an extraordinary growth kinetics. The indium bilayer preferably deposits in the initial stage and then the N atoms come up and penetrate vertically through a specific channel into between this double layer, finally forming the tetrahedral coordination of InN. Following this kinetic process, alternative pulse supply of precursors was proposed for the InN film growing and smoothening, which can effectively improve the surface smoothness.