Mechanism of non-metal catalytic growth of graphene on silicon

Compared to preparation on metal substrates, graphene synthesis on non-metal surfaces is highly desirable to avoid the deleterious metallic effects in fabrication of electronic devices. However, study of graphene growth mechanism on non-metal surfaces is rare and little understood. Here, we report t...

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Veröffentlicht in:Applied physics letters 2012-06, Vol.100 (23), p.231604-231604-5
Hauptverfasser: Hong, Guo, Wu, Qi-Hui, Ren, Jianguo, Lee, Shuit-Tong
Format: Artikel
Sprache:eng
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Zusammenfassung:Compared to preparation on metal substrates, graphene synthesis on non-metal surfaces is highly desirable to avoid the deleterious metallic effects in fabrication of electronic devices. However, study of graphene growth mechanism on non-metal surfaces is rare and little understood. Here, we report that few-layers graphene films can be grown directly on silicon-on-insulator surface. Furthermore, the graphene growth mechanism on non-metal surfaces is proposed as a surface reaction, adsorption, decomposition, and accumulation process.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4726114