Mechanism of non-metal catalytic growth of graphene on silicon
Compared to preparation on metal substrates, graphene synthesis on non-metal surfaces is highly desirable to avoid the deleterious metallic effects in fabrication of electronic devices. However, study of graphene growth mechanism on non-metal surfaces is rare and little understood. Here, we report t...
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Veröffentlicht in: | Applied physics letters 2012-06, Vol.100 (23), p.231604-231604-5 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Compared to preparation on metal substrates, graphene synthesis on non-metal surfaces is highly desirable to avoid the deleterious metallic effects in fabrication of electronic devices. However, study of graphene growth mechanism on non-metal surfaces is rare and little understood. Here, we report that few-layers graphene films can be grown directly on silicon-on-insulator surface. Furthermore, the graphene growth mechanism on non-metal surfaces is proposed as a surface reaction, adsorption, decomposition, and accumulation process. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4726114 |