Hyperthermal H atom interactions with D/Si(100): Effects of incident H atom kinetic energy on the removal of adsorbed D

Hyperthermal H atom interactions with D/Si(100): Effects of incident H atom kinetic energy on the removal of adsorbed D

The interactions of H atoms having hyperthermal energies with a monodeuteride-terminated Si(100) surface are investigated. H atoms having mean kinetic energies of 1.0 and 2.9 eV are generated by 248 and 193 nm laser photolysis, respectively, of a pulsed, free-jet expansion of HI. Full characterizati...

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Veröffentlicht in:The Journal of chemical physics 1996-08, Vol.105 (5), p.2066-2075
1. Verfasser: Buntin, Steven A.
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description The interactions of H atoms having hyperthermal energies with a monodeuteride-terminated Si(100) surface are investigated. H atoms having mean kinetic energies of 1.0 and 2.9 eV are generated by 248 and 193 nm laser photolysis, respectively, of a pulsed, free-jet expansion of HI. Full characterization of the laser photolysis conditions allows the determination of the relative, as well as absolute, H atom exposures for these two kinetic energies. The depletion probability of adsorbed D per incident H atom is identical for species having incident kinetic energies of 1.0 and 2.9 eV and has an absolute value of 0.3±0.2.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_472077</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_472077</sourcerecordid><originalsourceid>FETCH-LOGICAL-c225t-31a5832b45db24aaabc0243cca5790fd121ec12c1126d571145382b116c568c93</originalsourceid><addsrcrecordid>eNo1kLFOwzAURS0EEqUg8Qkey5D2PTu2EzbUFopUiQGYI8dxqKGJK9uiyt8TVJjucs8ZDiG3CHMEyRc4zxUDpc7IBKEoMyVLOCcTAIZZKUFekqsYPwEAFcsn5LgZDjaknQ2d3tMN1cl31PXJBm2S832kR5d2dLV4dTMEuLun67a1JkXq2_FnXGP79M99ud4mZ6jtbfgYqO_pKKbBdv57lI-AbqIPtW3o6ppctHof7c3fTsn74_ptucm2L0_Py4dtZhgTKeOoRcFZnYumZrnWujbAcm6MFqqEtkGG1iAziEw2QiHmghesRpRGyMKUfEpmJ68JPsZg2-oQXKfDUCFUv8EqrE7B-A_csVvy</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Hyperthermal H atom interactions with D/Si(100): Effects of incident H atom kinetic energy on the removal of adsorbed D</title><source>AIP Digital Archive</source><creator>Buntin, Steven A.</creator><creatorcontrib>Buntin, Steven A.</creatorcontrib><description>The interactions of H atoms having hyperthermal energies with a monodeuteride-terminated Si(100) surface are investigated. H atoms having mean kinetic energies of 1.0 and 2.9 eV are generated by 248 and 193 nm laser photolysis, respectively, of a pulsed, free-jet expansion of HI. Full characterization of the laser photolysis conditions allows the determination of the relative, as well as absolute, H atom exposures for these two kinetic energies. The depletion probability of adsorbed D per incident H atom is identical for species having incident kinetic energies of 1.0 and 2.9 eV and has an absolute value of 0.3±0.2.</description><identifier>ISSN: 0021-9606</identifier><identifier>EISSN: 1089-7690</identifier><identifier>DOI: 10.1063/1.472077</identifier><language>eng</language><ispartof>The Journal of chemical physics, 1996-08, Vol.105 (5), p.2066-2075</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-31a5832b45db24aaabc0243cca5790fd121ec12c1126d571145382b116c568c93</citedby><cites>FETCH-LOGICAL-c225t-31a5832b45db24aaabc0243cca5790fd121ec12c1126d571145382b116c568c93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Buntin, Steven A.</creatorcontrib><title>Hyperthermal H atom interactions with D/Si(100): Effects of incident H atom kinetic energy on the removal of adsorbed D</title><title>The Journal of chemical physics</title><description>The interactions of H atoms having hyperthermal energies with a monodeuteride-terminated Si(100) surface are investigated. H atoms having mean kinetic energies of 1.0 and 2.9 eV are generated by 248 and 193 nm laser photolysis, respectively, of a pulsed, free-jet expansion of HI. Full characterization of the laser photolysis conditions allows the determination of the relative, as well as absolute, H atom exposures for these two kinetic energies. The depletion probability of adsorbed D per incident H atom is identical for species having incident kinetic energies of 1.0 and 2.9 eV and has an absolute value of 0.3±0.2.</description><issn>0021-9606</issn><issn>1089-7690</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNo1kLFOwzAURS0EEqUg8Qkey5D2PTu2EzbUFopUiQGYI8dxqKGJK9uiyt8TVJjucs8ZDiG3CHMEyRc4zxUDpc7IBKEoMyVLOCcTAIZZKUFekqsYPwEAFcsn5LgZDjaknQ2d3tMN1cl31PXJBm2S832kR5d2dLV4dTMEuLun67a1JkXq2_FnXGP79M99ud4mZ6jtbfgYqO_pKKbBdv57lI-AbqIPtW3o6ppctHof7c3fTsn74_ptucm2L0_Py4dtZhgTKeOoRcFZnYumZrnWujbAcm6MFqqEtkGG1iAziEw2QiHmghesRpRGyMKUfEpmJ68JPsZg2-oQXKfDUCFUv8EqrE7B-A_csVvy</recordid><startdate>19960801</startdate><enddate>19960801</enddate><creator>Buntin, Steven A.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19960801</creationdate><title>Hyperthermal H atom interactions with D/Si(100): Effects of incident H atom kinetic energy on the removal of adsorbed D</title><author>Buntin, Steven A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-31a5832b45db24aaabc0243cca5790fd121ec12c1126d571145382b116c568c93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Buntin, Steven A.</creatorcontrib><collection>CrossRef</collection><jtitle>The Journal of chemical physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Buntin, Steven A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hyperthermal H atom interactions with D/Si(100): Effects of incident H atom kinetic energy on the removal of adsorbed D</atitle><jtitle>The Journal of chemical physics</jtitle><date>1996-08-01</date><risdate>1996</risdate><volume>105</volume><issue>5</issue><spage>2066</spage><epage>2075</epage><pages>2066-2075</pages><issn>0021-9606</issn><eissn>1089-7690</eissn><abstract>The interactions of H atoms having hyperthermal energies with a monodeuteride-terminated Si(100) surface are investigated. H atoms having mean kinetic energies of 1.0 and 2.9 eV are generated by 248 and 193 nm laser photolysis, respectively, of a pulsed, free-jet expansion of HI. Full characterization of the laser photolysis conditions allows the determination of the relative, as well as absolute, H atom exposures for these two kinetic energies. The depletion probability of adsorbed D per incident H atom is identical for species having incident kinetic energies of 1.0 and 2.9 eV and has an absolute value of 0.3±0.2.</abstract><doi>10.1063/1.472077</doi><tpages>10</tpages></addata></record>
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language eng
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title Hyperthermal H atom interactions with D/Si(100): Effects of incident H atom kinetic energy on the removal of adsorbed D
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T11%3A50%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Hyperthermal%20H%20atom%20interactions%20with%20D/Si(100):%20Effects%20of%20incident%20H%20atom%20kinetic%20energy%20on%20the%20removal%20of%20adsorbed%20D&rft.jtitle=The%20Journal%20of%20chemical%20physics&rft.au=Buntin,%20Steven%20A.&rft.date=1996-08-01&rft.volume=105&rft.issue=5&rft.spage=2066&rft.epage=2075&rft.pages=2066-2075&rft.issn=0021-9606&rft.eissn=1089-7690&rft_id=info:doi/10.1063/1.472077&rft_dat=%3Ccrossref%3E10_1063_1_472077%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true