Hyperthermal H atom interactions with D/Si(100): Effects of incident H atom kinetic energy on the removal of adsorbed D

The interactions of H atoms having hyperthermal energies with a monodeuteride-terminated Si(100) surface are investigated. H atoms having mean kinetic energies of 1.0 and 2.9 eV are generated by 248 and 193 nm laser photolysis, respectively, of a pulsed, free-jet expansion of HI. Full characterization of the laser photolysis conditions allows the determination of the relative, as well as absolute, H atom exposures for these two kinetic energies. The depletion probability of adsorbed D per incident H atom is identical for species having incident kinetic energies of 1.0 and 2.9 eV and has an absolute value of 0.3±0.2.