Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN

We investigated the characteristics of InGaN-based multiple quantum wells (MQWs) grown on a-plane and c-plane GaN templates, which were grown by metal-organic chemical vapor deposition onto r-plane and c-plane sapphire, respectively. A shorter photoluminescence peak wavelength and peaks with larger...

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Veröffentlicht in:	Applied physics letters 2012-05, Vol.100 (21), p.212103-212103-4
Hauptverfasser:	Song, Keun-Man, Kim, Jong-Min, Kang, Bong-Kyun, Yoon, Dae-Ho, Kang, S., Lee, Sang-Won, Lee, Sung-Nam
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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