Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN
We investigated the characteristics of InGaN-based multiple quantum wells (MQWs) grown on a-plane and c-plane GaN templates, which were grown by metal-organic chemical vapor deposition onto r-plane and c-plane sapphire, respectively. A shorter photoluminescence peak wavelength and peaks with larger...
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Veröffentlicht in: | Applied physics letters 2012-05, Vol.100 (21), p.212103-212103-4 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We investigated the characteristics of InGaN-based multiple quantum wells (MQWs) grown on a-plane and c-plane GaN templates, which were grown by metal-organic chemical vapor deposition onto r-plane and c-plane sapphire, respectively. A shorter photoluminescence peak wavelength and peaks with larger full-width at half-maximum are observed for MQWs grown on an a-plane GaN template compared with a c-plane GaN template, despite the same growth conditions used. A growth model based on the atomic configuration of the growing surfaces is proposed to explain the difference in optical emission properties and indium incorporation between a-plane and c-plane MQWs. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4720507 |