Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process

Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process

In this work, vertically integrated amorphous-In2Ga2ZnO7 (a-IGZO) thin film transistors (V-TFTs) with 310 nm channel length were fabricated using a low temperature process (

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Veröffentlicht in:Applied physics letters 2012-05, Vol.100 (20)
Hauptverfasser: Ho Rha, Sang, Jung, Jisim, Soo Jung, Yoon, Jang Chung, Yoon, Ki Kim, Un, Suk Hwang, Eun, Keon Park, Byoung, Joo Park, Tae, Choi, Jung-Hae, Seong Hwang, Cheol
Format: Artikel
Sprache:eng
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Zusammenfassung:In this work, vertically integrated amorphous-In2Ga2ZnO7 (a-IGZO) thin film transistors (V-TFTs) with 310 nm channel length were fabricated using a low temperature process (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4717621