N-channel carbon nanotube enabled vertical field effect transistors with solution deposited ZnO nanoparticle based channel layers

N-channel carbon nanotube enabled vertical field effect transistors (CN-VFETs) exploiting a solution deposited ZnO nanoparticle thin film as the channel material are demonstrated. Transistor performance benefits from a thermal anneal followed by an oxygen plasma treatment. The devices exhibit on/off...

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Veröffentlicht in:	Applied physics letters 2012-04, Vol.100 (17), p.173514-173514-3
Hauptverfasser:	Wang, Po-Hsiang, Liu, Bo, Shen, Yu, Zheng, Ying, McCarthy, Mitchell A., Holloway, Paul, Rinzler, Andrew G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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