Organic memory device with polyaniline nanoparticles embedded as charging elements

Polyaniline nanoparticles (PANI NPs) were synthesized and fabricated as charging elements for organic memory devices. The PANI NPs charging layer was self-assembled by epoxy-amine bonds between 3-glycidylpropyl trimethoxysilane functionalized dielectrics and PANI NPs. A memory window of 5.8V (ΔV FB ) represented by capacitance-voltage hysteresis was obtained for metal-pentacene-insulator-silicon capacitor. In addition, program/erase operations controlled by gate bias (−/+90V) were demonstrated in the PANI NPs embedded pentacene thin film transistor device with polyvinylalcohol dielectric on flexible polyimide substrate. These results can be extended to development of fully organic-based electronic device.