Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths ( B pp = 12 μ T) and long spin coherence times ( T 2 = 0 . 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.