Photochemistry near a semiconductor surface

A numerical study of photochemistry near a rough InSb surface, whose roughness is modeled as a spheroidal bump protruding out of the substrate plane, has been carried out. The semiconducting nature of the substrate is taken into account via a model dielectric function. ‘‘Shape resonance’’ effects th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:The Journal of chemical physics 1993, Vol.98 (1), p.746-752
Hauptverfasser: MOINI, S, PURI, A, DAS, P. C
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 752
container_issue 1
container_start_page 746
container_title The Journal of chemical physics
container_volume 98
creator MOINI, S
PURI, A
DAS, P. C
description A numerical study of photochemistry near a rough InSb surface, whose roughness is modeled as a spheroidal bump protruding out of the substrate plane, has been carried out. The semiconducting nature of the substrate is taken into account via a model dielectric function. ‘‘Shape resonance’’ effects through the resonant coupling of the bump excitations to photons and various substrate modes (plasmons, phonons, etc.) are calculated and included in the study. Unlike in the case of a metal surface, radiation damping as well as damping due to adsorbate–substrate coupling are seen to play a minor role.
doi_str_mv 10.1063/1.464621
format Article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_464621</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4528236</sourcerecordid><originalsourceid>FETCH-LOGICAL-c217t-5441b18d48a4a3bcb19ded332c81177262624f239372f97caba515b55f044fb13</originalsourceid><addsrcrecordid>eNo9j01Lw0AURQdRMFbBn5CFC0FS35vPzFKKVaGgC12HN5MZGmmTMpMu-u-NROQuLhcOFw5jtwhLBC0ecSm11BzPWIFQ28poC-esAOBYWQ36kl3l_A0AaLgs2MPHdhgHvw37Lo_pVPaBUkllnrYf-vboxyGV-Zgi-XDNLiLtcrj56wX7Wj9_rl6rzfvL2-ppU3mOZqyUlOiwbmVNkoTzDm0bWiG4rxGN4XqKjFxYYXi0xpMjhcopFUHK6FAs2P3869OQcwqxOaRuT-nUIDS_kg02s-SE3s3ogbKnXUzU-y7_81LxmgstfgDDGk8M</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photochemistry near a semiconductor surface</title><source>AIP Digital Archive</source><creator>MOINI, S ; PURI, A ; DAS, P. C</creator><creatorcontrib>MOINI, S ; PURI, A ; DAS, P. C</creatorcontrib><description>A numerical study of photochemistry near a rough InSb surface, whose roughness is modeled as a spheroidal bump protruding out of the substrate plane, has been carried out. The semiconducting nature of the substrate is taken into account via a model dielectric function. ‘‘Shape resonance’’ effects through the resonant coupling of the bump excitations to photons and various substrate modes (plasmons, phonons, etc.) are calculated and included in the study. Unlike in the case of a metal surface, radiation damping as well as damping due to adsorbate–substrate coupling are seen to play a minor role.</description><identifier>ISSN: 0021-9606</identifier><identifier>EISSN: 1089-7690</identifier><identifier>DOI: 10.1063/1.464621</identifier><identifier>CODEN: JCPSA6</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Chemistry ; Exact sciences and technology ; General and physical chemistry ; Photochemistry ; Physical chemistry of induced reactions (with radiations, particles and ultrasonics)</subject><ispartof>The Journal of chemical physics, 1993, Vol.98 (1), p.746-752</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c217t-5441b18d48a4a3bcb19ded332c81177262624f239372f97caba515b55f044fb13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=4528236$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>MOINI, S</creatorcontrib><creatorcontrib>PURI, A</creatorcontrib><creatorcontrib>DAS, P. C</creatorcontrib><title>Photochemistry near a semiconductor surface</title><title>The Journal of chemical physics</title><description>A numerical study of photochemistry near a rough InSb surface, whose roughness is modeled as a spheroidal bump protruding out of the substrate plane, has been carried out. The semiconducting nature of the substrate is taken into account via a model dielectric function. ‘‘Shape resonance’’ effects through the resonant coupling of the bump excitations to photons and various substrate modes (plasmons, phonons, etc.) are calculated and included in the study. Unlike in the case of a metal surface, radiation damping as well as damping due to adsorbate–substrate coupling are seen to play a minor role.</description><subject>Chemistry</subject><subject>Exact sciences and technology</subject><subject>General and physical chemistry</subject><subject>Photochemistry</subject><subject>Physical chemistry of induced reactions (with radiations, particles and ultrasonics)</subject><issn>0021-9606</issn><issn>1089-7690</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9j01Lw0AURQdRMFbBn5CFC0FS35vPzFKKVaGgC12HN5MZGmmTMpMu-u-NROQuLhcOFw5jtwhLBC0ecSm11BzPWIFQ28poC-esAOBYWQ36kl3l_A0AaLgs2MPHdhgHvw37Lo_pVPaBUkllnrYf-vboxyGV-Zgi-XDNLiLtcrj56wX7Wj9_rl6rzfvL2-ppU3mOZqyUlOiwbmVNkoTzDm0bWiG4rxGN4XqKjFxYYXi0xpMjhcopFUHK6FAs2P3869OQcwqxOaRuT-nUIDS_kg02s-SE3s3ogbKnXUzU-y7_81LxmgstfgDDGk8M</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>MOINI, S</creator><creator>PURI, A</creator><creator>DAS, P. C</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1993</creationdate><title>Photochemistry near a semiconductor surface</title><author>MOINI, S ; PURI, A ; DAS, P. C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c217t-5441b18d48a4a3bcb19ded332c81177262624f239372f97caba515b55f044fb13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Chemistry</topic><topic>Exact sciences and technology</topic><topic>General and physical chemistry</topic><topic>Photochemistry</topic><topic>Physical chemistry of induced reactions (with radiations, particles and ultrasonics)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MOINI, S</creatorcontrib><creatorcontrib>PURI, A</creatorcontrib><creatorcontrib>DAS, P. C</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>The Journal of chemical physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MOINI, S</au><au>PURI, A</au><au>DAS, P. C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photochemistry near a semiconductor surface</atitle><jtitle>The Journal of chemical physics</jtitle><date>1993</date><risdate>1993</risdate><volume>98</volume><issue>1</issue><spage>746</spage><epage>752</epage><pages>746-752</pages><issn>0021-9606</issn><eissn>1089-7690</eissn><coden>JCPSA6</coden><abstract>A numerical study of photochemistry near a rough InSb surface, whose roughness is modeled as a spheroidal bump protruding out of the substrate plane, has been carried out. The semiconducting nature of the substrate is taken into account via a model dielectric function. ‘‘Shape resonance’’ effects through the resonant coupling of the bump excitations to photons and various substrate modes (plasmons, phonons, etc.) are calculated and included in the study. Unlike in the case of a metal surface, radiation damping as well as damping due to adsorbate–substrate coupling are seen to play a minor role.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.464621</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-9606
ispartof The Journal of chemical physics, 1993, Vol.98 (1), p.746-752
issn 0021-9606
1089-7690
language eng
recordid cdi_crossref_primary_10_1063_1_464621
source AIP Digital Archive
subjects Chemistry
Exact sciences and technology
General and physical chemistry
Photochemistry
Physical chemistry of induced reactions (with radiations, particles and ultrasonics)
title Photochemistry near a semiconductor surface
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T21%3A24%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photochemistry%20near%20a%20semiconductor%20surface&rft.jtitle=The%20Journal%20of%20chemical%20physics&rft.au=MOINI,%20S&rft.date=1993&rft.volume=98&rft.issue=1&rft.spage=746&rft.epage=752&rft.pages=746-752&rft.issn=0021-9606&rft.eissn=1089-7690&rft.coden=JCPSA6&rft_id=info:doi/10.1063/1.464621&rft_dat=%3Cpascalfrancis_cross%3E4528236%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true