Photochemistry near a semiconductor surface

A numerical study of photochemistry near a rough InSb surface, whose roughness is modeled as a spheroidal bump protruding out of the substrate plane, has been carried out. The semiconducting nature of the substrate is taken into account via a model dielectric function. ‘‘Shape resonance’’ effects through the resonant coupling of the bump excitations to photons and various substrate modes (plasmons, phonons, etc.) are calculated and included in the study. Unlike in the case of a metal surface, radiation damping as well as damping due to adsorbate–substrate coupling are seen to play a minor role.