Simulation and growth of gold on silicon oxide in one-dimensional and quasi-one-dimensional arrays
The granular film deposition of gold atoms by means of thermal evaporation on silicon oxide surfaces is known to produce nanometer-scale islands which show electrical characteristics dominated by Coulomb blockade. Here we report on the growth and the simulation of structures produced by a combinatio...
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Veröffentlicht in: | Journal of applied physics 2000-05, Vol.87 (10), p.7261-7265 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The granular film deposition of gold atoms by means of thermal evaporation on silicon oxide surfaces is known to produce nanometer-scale islands which show electrical characteristics dominated by Coulomb blockade. Here we report on the growth and the simulation of structures produced by a combination of evaporation and lithography. A lithographic technique is used to define a region of a width of several nm that is surrounded by polymethylmethacrylate (PMMA). The PMMA confines the diffusion of the atoms, and the growth process is characterized by different boundary conditions compared with the case where atoms are deposited on a macroscopic surface. This method enables us to create quasi-one-dimensional (quasi-1D) and 1D structures in which the gold islands are arranged in a single row where the lateral size is only a few nanometers. Such structures offer the possibility of studying Coulomb blockade in 1D arrays and a signature of self-organized growth is observed in such structures. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.372978 |