Dielectric loss anomaly of BaBiO3

Dielectric properties of oxygen deficient BaBiO3−δ have been analyzed, and dielectric loss anomalies at 175 and 225 K were found, which were dependent on oxygen deficiency. The activation energies corresponding to the relaxation processes of dielectric anomalies at 175 and 225 K were 0.26 and 0.50 e...

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Veröffentlicht in:Journal of applied physics 1999-12, Vol.86 (11), p.6351-6354
Hauptverfasser: Lee, Seung-Hoon, Jung, Woo-Hwan, Sohn, Jeong-Ho, Lee, Joon-Hyung, Cho, Sang-Hee
Format: Artikel
Sprache:eng
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Zusammenfassung:Dielectric properties of oxygen deficient BaBiO3−δ have been analyzed, and dielectric loss anomalies at 175 and 225 K were found, which were dependent on oxygen deficiency. The activation energies corresponding to the relaxation processes of dielectric anomalies at 175 and 225 K were 0.26 and 0.50 eV, respectively. The dielectric anomaly at 175 K is believed to be caused by hole movement from an occupied Bi 6s band to hole polaron accommodating band state. Another anomaly at 225 K is believed to occur from the hopping of a hole between a Bi 6s band and the Fermi level.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.371697