Dielectric loss anomaly of BaBiO3
Dielectric properties of oxygen deficient BaBiO3−δ have been analyzed, and dielectric loss anomalies at 175 and 225 K were found, which were dependent on oxygen deficiency. The activation energies corresponding to the relaxation processes of dielectric anomalies at 175 and 225 K were 0.26 and 0.50 e...
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Veröffentlicht in: | Journal of applied physics 1999-12, Vol.86 (11), p.6351-6354 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Dielectric properties of oxygen deficient BaBiO3−δ have been analyzed, and dielectric loss anomalies at 175 and 225 K were found, which were dependent on oxygen deficiency. The activation energies corresponding to the relaxation processes of dielectric anomalies at 175 and 225 K were 0.26 and 0.50 eV, respectively. The dielectric anomaly at 175 K is believed to be caused by hole movement from an occupied Bi 6s band to hole polaron accommodating band state. Another anomaly at 225 K is believed to occur from the hopping of a hole between a Bi 6s band and the Fermi level. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.371697 |