Precise determination of indium composition and channel thickness in pseudomorphic high electron mobility transistors using room temperature photoluminescence

Proper composition and thickness of the InGaAs channel in pseudomorphic high electron mobility transistors (PHEMTs) is critical to assuring good device performance. Typically these characteristics have been measured by high-resolution x-ray diffraction. The results presented in this work show that t...

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Veröffentlicht in:Journal of applied physics 1999-07, Vol.86 (2), p.914-917
Hauptverfasser: Brierley, Steven K., Torabi, Abbas, Lyman, Peter S.
Format: Artikel
Sprache:eng
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Zusammenfassung:Proper composition and thickness of the InGaAs channel in pseudomorphic high electron mobility transistors (PHEMTs) is critical to assuring good device performance. Typically these characteristics have been measured by high-resolution x-ray diffraction. The results presented in this work show that the subband energy levels obtained from line shape analysis of room temperature photoluminescence spectra on these structures can be correlated very well with thickness and composition obtained from x-ray diffraction. Since the photoluminescence measurement and analysis is quite fast, this technique is suitable for rapid, nondestructive screening of PHEMT epitaxial material.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.370823