Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation

Resistive memory devices fabricated from oxygen implanted tantalum exhibited bipolar switching without a forming voltage. The influence of the current limit during SET on the switching properties has been studied using endurance measurements. The SET/RESET voltages did not change with the current li...

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Veröffentlicht in:	Applied physics letters 2012-04, Vol.100 (14), p.142111-142111-4
Hauptverfasser:	Bishop, S. M., Bakhru, H., Capulong, J. O., Cady, N. C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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