Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation

Resistive memory devices fabricated from oxygen implanted tantalum exhibited bipolar switching without a forming voltage. The influence of the current limit during SET on the switching properties has been studied using endurance measurements. The SET/RESET voltages did not change with the current limit. The RESET current increased proportionally to the SET current, while the on-state resistance varied inversely to the SET current. These results are consistent with a RESET process that is directly linked to the peak power during SET. The trade-off between the switching endurance and memory window that results from the SET process is also shown.