Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation

Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation

Resistive memory devices fabricated from oxygen implanted tantalum exhibited bipolar switching without a forming voltage. The influence of the current limit during SET on the switching properties has been studied using endurance measurements. The SET/RESET voltages did not change with the current li...

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Veröffentlicht in:Applied physics letters 2012-04, Vol.100 (14), p.142111-142111-4
Hauptverfasser: Bishop, S. M., Bakhru, H., Capulong, J. O., Cady, N. C.
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container_issue 14
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container_title Applied physics letters
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creator Bishop, S. M.
Bakhru, H.
Capulong, J. O.
Cady, N. C.
description Resistive memory devices fabricated from oxygen implanted tantalum exhibited bipolar switching without a forming voltage. The influence of the current limit during SET on the switching properties has been studied using endurance measurements. The SET/RESET voltages did not change with the current limit. The RESET current increased proportionally to the SET current, while the on-state resistance varied inversely to the SET current. These results are consistent with a RESET process that is directly linked to the peak power during SET. The trade-off between the switching endurance and memory window that results from the SET process is also shown.
doi_str_mv 10.1063/1.3701154
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title Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation
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