Enhancement of carrier-mediated ferromagnetism in Zr/Fe-codoped In2O3 films

Fe/Zr-codoped In2O3 thin films were grown on yttria stabilized zirconia substrates by pulsed laser deposition. The deposited films exhibited ferromagnetism at room temperature with strong magnetic anisotropy, which was influenced by a magnetostriction effect under tensile stress (i.e., c/a > 1)....

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Veröffentlicht in:Applied physics letters 2012-04, Vol.100 (14)
Hauptverfasser: Kim, H., Osofsky, M., Auyeung, R. C. Y., Piqué, A.
Format: Artikel
Sprache:eng
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Zusammenfassung:Fe/Zr-codoped In2O3 thin films were grown on yttria stabilized zirconia substrates by pulsed laser deposition. The deposited films exhibited ferromagnetism at room temperature with strong magnetic anisotropy, which was influenced by a magnetostriction effect under tensile stress (i.e., c/a > 1). Both the saturation magnetization and anomalous Hall effect (AHE) were enhanced by increasing charge carrier density via Zr-doping. Our observations, including AHE and magnetic anisotropy, provide strong evidence of intrinsic ferromagnetism at room temperature in these materials.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3700864