Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier

Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier

The fully epitaxial ZnO-based ZnO:Co/ZnO:Mg/ZnO:Co magnetic tunnel junctions were grown on Al 2 O 3 (0001) substrate by oxygen plasma-assisted molecular beam epitaxy. The magnetoresistance behavior and spin injection through ZnO:Mg barrier were investigated. An enhanced positive tunnel magnetoresist...

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Veröffentlicht in:Applied physics letters 2012-03, Vol.100 (13), p.132406-132406-3
Hauptverfasser: He, Shumin, Bai, Hongliang, Liu, Guolei, Li, Qiang, Yan, Shishen, Chen, Yanxue, Mei, Liangmo, Liu, Houfang, Wang, Shouguo, Han, Xiufeng
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Sprache:eng
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Zusammenfassung:The fully epitaxial ZnO-based ZnO:Co/ZnO:Mg/ZnO:Co magnetic tunnel junctions were grown on Al 2 O 3 (0001) substrate by oxygen plasma-assisted molecular beam epitaxy. The magnetoresistance behavior and spin injection through ZnO:Mg barrier were investigated. An enhanced positive tunnel magnetoresistance ratio of 85.6% is observed at 1.8T at 5K. The junction resistance at zero magnetic field is linear with respect to temperature power law T −4/3 between 5K and 70K, indicating that carriers tunnel through ZnO:Mg barrier via two localized states.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3698151