Thermally stimulated-current observation of hole traps in undoped semi-insulating GaAs and their photoquenching behavior

Detailed thermally stimulated-current measurements have been conducted on an undoped, semi-insulating GaAs crystal under 1.06 μm illumination at 15 K. By combining with Hall voltage measurements, we confirmed the presence of hole traps that show similar activation energies with the one proposed for...

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Veröffentlicht in:Journal of applied physics 1999-03, Vol.85 (6), p.3139-3141
Hauptverfasser: Suemitsu, Maki, Sagae, Yoshitomo, Miyamoto, Nobuo
Format: Artikel
Sprache:eng
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Zusammenfassung:Detailed thermally stimulated-current measurements have been conducted on an undoped, semi-insulating GaAs crystal under 1.06 μm illumination at 15 K. By combining with Hall voltage measurements, we confirmed the presence of hole traps that show similar activation energies with the one proposed for the actuator level in the deep acceptor-mediated photoquenching model of EL2 [Suemitsu et al., Phys. Rev. B 52, 1666 (1995)]. The observed quenching of these hole traps suggests that the actuator level be, most likely, a part of the metastable complex.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.369653