Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-sta...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2012-03, Vol.100 (12), p.123505-123505-4
Hauptverfasser: Ho Lee, Jong, Hwan Kim, Gun, Bae Ahn, Young, Woon Park, Ji, Wook Ryu, Seung, Seong Hwang, Cheol, Joon Kim, Hyeong
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 123505-4
container_issue 12
container_start_page 123505
container_title Applied physics letters
container_volume 100
creator Ho Lee, Jong
Hwan Kim, Gun
Bae Ahn, Young
Woon Park, Ji
Wook Ryu, Seung
Seong Hwang, Cheol
Joon Kim, Hyeong
description Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO 2 unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5V.
doi_str_mv 10.1063/1.3696077
format Article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3696077</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-53d6ea59fc38e9cb05dfbdd22cd08a0d149c4d68e24c8ea55c1366d6ff2ac67d3</originalsourceid><addsrcrecordid>eNp1kEtLAzEUhYMoOFYX_oNsXaQmk5nMzMJFKb6g4MK6dUhvbpzIPCQJlf57oy3duTqcy8fh8hFyLfhccCVvxVyqRvGqOiGZSMGkEPUpyTjnkqmmFOfkIoTPVMtcyoy8rzuPoZt6Q8O3i9C58YO6kb46tghsjTSmC7WuH6idfGpIA_YIMRWDWwdIJ0vBTyFstKdpy4XotkgHHCa_uyRnVvcBrw45I28P9-vlE1u9PD4vFysGsmgiK6VRqMvGgqyxgQ0vjd0Yk-dgeK25EUUDhVE15gXUCSxBSKWMsjbXoCojZ-Rmv_v3iUfbfnk3aL9rBW9_xbSiPYhJ7N2eDeCijm4a_4ePdtqjHfkDkjpsbg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Ho Lee, Jong ; Hwan Kim, Gun ; Bae Ahn, Young ; Woon Park, Ji ; Wook Ryu, Seung ; Seong Hwang, Cheol ; Joon Kim, Hyeong</creator><creatorcontrib>Ho Lee, Jong ; Hwan Kim, Gun ; Bae Ahn, Young ; Woon Park, Ji ; Wook Ryu, Seung ; Seong Hwang, Cheol ; Joon Kim, Hyeong</creatorcontrib><description>Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO 2 unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5V.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3696077</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2012-03, Vol.100 (12), p.123505-123505-4</ispartof><rights>2012 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-53d6ea59fc38e9cb05dfbdd22cd08a0d149c4d68e24c8ea55c1366d6ff2ac67d3</citedby><cites>FETCH-LOGICAL-c349t-53d6ea59fc38e9cb05dfbdd22cd08a0d149c4d68e24c8ea55c1366d6ff2ac67d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3696077$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Ho Lee, Jong</creatorcontrib><creatorcontrib>Hwan Kim, Gun</creatorcontrib><creatorcontrib>Bae Ahn, Young</creatorcontrib><creatorcontrib>Woon Park, Ji</creatorcontrib><creatorcontrib>Wook Ryu, Seung</creatorcontrib><creatorcontrib>Seong Hwang, Cheol</creatorcontrib><creatorcontrib>Joon Kim, Hyeong</creatorcontrib><title>Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory</title><title>Applied physics letters</title><description>Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO 2 unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5V.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLAzEUhYMoOFYX_oNsXaQmk5nMzMJFKb6g4MK6dUhvbpzIPCQJlf57oy3duTqcy8fh8hFyLfhccCVvxVyqRvGqOiGZSMGkEPUpyTjnkqmmFOfkIoTPVMtcyoy8rzuPoZt6Q8O3i9C58YO6kb46tghsjTSmC7WuH6idfGpIA_YIMRWDWwdIJ0vBTyFstKdpy4XotkgHHCa_uyRnVvcBrw45I28P9-vlE1u9PD4vFysGsmgiK6VRqMvGgqyxgQ0vjd0Yk-dgeK25EUUDhVE15gXUCSxBSKWMsjbXoCojZ-Rmv_v3iUfbfnk3aL9rBW9_xbSiPYhJ7N2eDeCijm4a_4ePdtqjHfkDkjpsbg</recordid><startdate>20120319</startdate><enddate>20120319</enddate><creator>Ho Lee, Jong</creator><creator>Hwan Kim, Gun</creator><creator>Bae Ahn, Young</creator><creator>Woon Park, Ji</creator><creator>Wook Ryu, Seung</creator><creator>Seong Hwang, Cheol</creator><creator>Joon Kim, Hyeong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120319</creationdate><title>Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory</title><author>Ho Lee, Jong ; Hwan Kim, Gun ; Bae Ahn, Young ; Woon Park, Ji ; Wook Ryu, Seung ; Seong Hwang, Cheol ; Joon Kim, Hyeong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-53d6ea59fc38e9cb05dfbdd22cd08a0d149c4d68e24c8ea55c1366d6ff2ac67d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ho Lee, Jong</creatorcontrib><creatorcontrib>Hwan Kim, Gun</creatorcontrib><creatorcontrib>Bae Ahn, Young</creatorcontrib><creatorcontrib>Woon Park, Ji</creatorcontrib><creatorcontrib>Wook Ryu, Seung</creatorcontrib><creatorcontrib>Seong Hwang, Cheol</creatorcontrib><creatorcontrib>Joon Kim, Hyeong</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ho Lee, Jong</au><au>Hwan Kim, Gun</au><au>Bae Ahn, Young</au><au>Woon Park, Ji</au><au>Wook Ryu, Seung</au><au>Seong Hwang, Cheol</au><au>Joon Kim, Hyeong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory</atitle><jtitle>Applied physics letters</jtitle><date>2012-03-19</date><risdate>2012</risdate><volume>100</volume><issue>12</issue><spage>123505</spage><epage>123505-4</epage><pages>123505-123505-4</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO 2 unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5V.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3696077</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2012-03, Vol.100 (12), p.123505-123505-4
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_3696077
source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
title Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T10%3A28%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Threshold%20switching%20in%20Si-As-Te%20thin%20film%20for%20the%20selector%20device%20of%20crossbar%20resistive%20memory&rft.jtitle=Applied%20physics%20letters&rft.au=Ho%20Lee,%20Jong&rft.date=2012-03-19&rft.volume=100&rft.issue=12&rft.spage=123505&rft.epage=123505-4&rft.pages=123505-123505-4&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3696077&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true