Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory
Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-sta...
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Veröffentlicht in: | Applied physics letters 2012-03, Vol.100 (12), p.123505-123505-4 |
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creator | Ho Lee, Jong Hwan Kim, Gun Bae Ahn, Young Woon Park, Ji Wook Ryu, Seung Seong Hwang, Cheol Joon Kim, Hyeong |
description | Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO
2
unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5V. |
doi_str_mv | 10.1063/1.3696077 |
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2
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2
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2
unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5V.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3696077</doi></addata></record> |
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title | Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory |
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