Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO 2 unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5V.