Diffusion during metalorganic vapor-phase epitaxy on V-groove patterned substrates

Diffusion during metalorganic vapor-phase epitaxy on V-groove patterned substrates

We studied the diffusion process in metalorganic vapor-phase epitaxy of InGaAs on V-groove patterned InP substrates. A model, recently developed for selective-area growth on planar patterned substrates, enabled us to analyze growth rate distribution and to determine diffusion lengths of growing spec...

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Veröffentlicht in:Journal of applied physics 1999-01, Vol.85 (1), p.249-255
Hauptverfasser: Wüllner, D., Chahoud, M., Schrimpf, T., Bönsch, P., Wehmann, H.-H., Schlachetzki, A.
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container_end_page 255
container_issue 1
container_start_page 249
container_title Journal of applied physics
container_volume 85
creator Wüllner, D.
Chahoud, M.
Schrimpf, T.
Bönsch, P.
Wehmann, H.-H.
Schlachetzki, A.
description We studied the diffusion process in metalorganic vapor-phase epitaxy of InGaAs on V-groove patterned InP substrates. A model, recently developed for selective-area growth on planar patterned substrates, enabled us to analyze growth rate distribution and to determine diffusion lengths of growing species. Atomic force microscopy (AFM) and photoluminescence measurements have been employed to measure the growth rate and composition of the ternary alloy. A new technique based on composition sensitive etching combined with etch rate measurements by cross-section AFM reveals the reduced solidifying probability of Ga on {111}A planes as the origin of compositional variations.
doi_str_mv 10.1063/1.369437
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title Diffusion during metalorganic vapor-phase epitaxy on V-groove patterned substrates
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