Diffusion during metalorganic vapor-phase epitaxy on V-groove patterned substrates

We studied the diffusion process in metalorganic vapor-phase epitaxy of InGaAs on V-groove patterned InP substrates. A model, recently developed for selective-area growth on planar patterned substrates, enabled us to analyze growth rate distribution and to determine diffusion lengths of growing species. Atomic force microscopy (AFM) and photoluminescence measurements have been employed to measure the growth rate and composition of the ternary alloy. A new technique based on composition sensitive etching combined with etch rate measurements by cross-section AFM reveals the reduced solidifying probability of Ga on {111}A planes as the origin of compositional variations.