Room temperature magnetoresistance in CoFeB/SrTiO3/CoFeB magnetic tunnel junctions deposited by ion beam sputtering

Room temperature transport properties are reported in polycrystalline SrTiO3-based magnetic tunnel junctions deposited by ion beam sputtering. The junctions comprise CoFeB electrodes and the SrTiO3 barrier with thickness varied between 0.9 and 1.9 nm. Resistance area product values between 3 Ω.μm2 a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2012-04, Vol.111 (7)
Hauptverfasser: Hassen, E. M. J., Viala, B., Cyrille, M. C., Cartier, M., Redon, O., Lima, P., Belhadji, B., Yang, H. X., Velev, J., Chshiev, M.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Room temperature transport properties are reported in polycrystalline SrTiO3-based magnetic tunnel junctions deposited by ion beam sputtering. The junctions comprise CoFeB electrodes and the SrTiO3 barrier with thickness varied between 0.9 and 1.9 nm. Resistance area product values between 3 Ω.μm2 and 22 kΩ.μm2 have been measured with a tunnel magnetoresistance ratio ranging from 3.1 to 13% at room temperature. At low barrier thickness (1.2 nm), ferromagnetic coupling between electrodes is observed, indicating the presence of defects in the structure. A post-oxidation step was found to improve transport properties at lower barrier thickness.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3688913