In situ ellipsometric characterization of SiNx films grown by laser ablation
Uniform and smooth silicon nitride films have been synthesized by laser ablating a Si3N4 sintered target in an ultrahigh vacuum system in vacuum and different gas environments, N2, Ar, and He. The evolution of the composition and thickness control of SiNx overlayers grown on single-crystal Si and qu...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 1998-11, Vol.84 (9), p.5296-5305 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Uniform and smooth silicon nitride films have been synthesized by laser ablating a Si3N4 sintered target in an ultrahigh vacuum system in vacuum and different gas environments, N2, Ar, and He. The evolution of the composition and thickness control of SiNx overlayers grown on single-crystal Si and quartz substrates kept at room temperature have been in situ monitored by real-time ellipsometry at a fixed photon energy, 2.5 eV, and a fixed incidence angle, 71°. The different stages of the deposition process were momentarily interrupted to analyze the optical properties of the film in the photon energy range of 1.5 |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.368778 |