Impurity gettering to secondary defects created by MeV ion implantation in silicon

Impurities in MeV-implanted and annealed silicon may be trapped at interstitial defects near the projected ion range, Rp, and also at vacancy-related defects at approximately Rp/2. We have investigated the temperature dependence of impurity trapping at these secondary defects, which were preformed b...

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Veröffentlicht in:	Journal of applied physics 1998-09, Vol.84 (5), p.2459-2465
Hauptverfasser:	Brown, R. A., Kononchuk, O., Rozgonyi, G. A., Koveshnikov, S., Knights, A. P., Simpson, P. J., González, F.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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