Impurity gettering to secondary defects created by MeV ion implantation in silicon
Impurities in MeV-implanted and annealed silicon may be trapped at interstitial defects near the projected ion range, Rp, and also at vacancy-related defects at approximately Rp/2. We have investigated the temperature dependence of impurity trapping at these secondary defects, which were preformed b...
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Veröffentlicht in: | Journal of applied physics 1998-09, Vol.84 (5), p.2459-2465 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Impurities in MeV-implanted and annealed silicon may be trapped at interstitial defects near the projected ion range, Rp, and also at vacancy-related defects at approximately Rp/2. We have investigated the temperature dependence of impurity trapping at these secondary defects, which were preformed by annealing at 900 °C. The binding energies of Fe, Ni, and Cu are greater at the vacancy-related defects than at extrinsic dislocation loops. During subsequent processing at temperatures up to 900 °C, the amount of these impurities trapped at Rp/2 increases with decreasing temperature while the amount trapped at Rp decreases, with most of the trapped metals located at Rp/2 in samples processed at temperatures ≲ 700 °C. However, intrinsic oxygen is trapped at both types of defects; this appears to have little effect on the trapping of metallic impurities at extrinsic dislocations, but may inhibit or completely suppress the trapping at vacancy-related defects. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.368438 |