Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å

Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å

We report the values of the absorption coefficient of 4H SiC at room temperature, in the wavelength range from 3900 to 3350 Å and at 3250 Å. By using the known shift in the band gap with temperature, we also present an estimate of the absorption coefficient of 4H SiC at 2 K.

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Veröffentlicht in:Journal of applied physics 1998-09, Vol.84 (5), p.2963-2964
Hauptverfasser: Sridhara, S. G., Devaty, R. P., Choyke, W. J.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report the values of the absorption coefficient of 4H SiC at room temperature, in the wavelength range from 3900 to 3350 Å and at 3250 Å. By using the known shift in the band gap with temperature, we also present an estimate of the absorption coefficient of 4H SiC at 2 K.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.368403