Dependence of the density of defects in the oxide on Czochralski silicon on its thickness

The dependence of the density of defects in the oxide on Czochralski silicon substrates on its thickness is discussed quantitatively in terms of the shape and the size of the octahedral void defects. Oxide thinning at corners of the void defects may be a dominant factor in the oxide thickness dependence when oxide thickness is smaller than 50 nm. The size distribution (80–160 nm) of the void defects may be a dominant factor in the oxide thickness dependence when oxide thickness is larger than 50 nm. Model is presented to explain the mechanism of the two factors.