Enhanced carrier injection in pentacene thin-film transistors by inserting a MoO3-doped pentacene layer
We report on the enhanced carrier injection in pentacene thin-film transistors with a thin MoO3-doped pentacene layer between pentacene semiconductor and the source-drain electrodes. Device performance including drain current, field effect mobility, and threshed voltage are improved by employing a M...
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Veröffentlicht in: | Applied physics letters 2012-01, Vol.100 (4) |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We report on the enhanced carrier injection in pentacene thin-film transistors with a thin MoO3-doped pentacene layer between pentacene semiconductor and the source-drain electrodes. Device performance including drain current, field effect mobility, and threshed voltage are improved by employing a MoO3-doped pentacene thin layer. The barrier height at the Au/pentacene interface is lowered from 0.12 to 0.05 eV after inserting a MoO3-doped pentacene thin layer between them. The reduced barrier height is attributed to the formation of a good contact between MoO3-doped pentacene and Au owing to smoothed surface morphology of pentancene and suitable band bending by MoO3 doping. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3680249 |