Enhanced carrier injection in pentacene thin-film transistors by inserting a MoO3-doped pentacene layer

We report on the enhanced carrier injection in pentacene thin-film transistors with a thin MoO3-doped pentacene layer between pentacene semiconductor and the source-drain electrodes. Device performance including drain current, field effect mobility, and threshed voltage are improved by employing a M...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2012-01, Vol.100 (4)
Hauptverfasser: Wang, Zhaokui, Waqas Alam, Mir, Lou, Yanhui, Naka, Shigeki, Okada, Hiroyuki
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on the enhanced carrier injection in pentacene thin-film transistors with a thin MoO3-doped pentacene layer between pentacene semiconductor and the source-drain electrodes. Device performance including drain current, field effect mobility, and threshed voltage are improved by employing a MoO3-doped pentacene thin layer. The barrier height at the Au/pentacene interface is lowered from 0.12 to 0.05 eV after inserting a MoO3-doped pentacene thin layer between them. The reduced barrier height is attributed to the formation of a good contact between MoO3-doped pentacene and Au owing to smoothed surface morphology of pentancene and suitable band bending by MoO3 doping.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3680249