Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress

We investigated the degradation of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) for various channel widths under high-gate and drain bias stress. The threshold voltage of IGZO TFT with wide-channel width (W>100 μ m) was significantly shifted. This included stress-induced hump-eff...

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Veröffentlicht in:	Applied physics letters 2012-01, Vol.100 (4), p.043503-043503-3
Hauptverfasser:	Choi, Sung-Hwan, Han, Min-Koo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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