Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress

We investigated the degradation of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) for various channel widths under high-gate and drain bias stress. The threshold voltage of IGZO TFT with wide-channel width (W>100 μ m) was significantly shifted. This included stress-induced hump-effect in a negative direction after the stress, whereas IGZO TFT with narrow-channel width (W