Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory

A novel 7-transistor/2-magnetic-tunnel-junction (7T-2MTJ) cell circuit is proposed for a high-speed and compact nonvolatile ternary content-addressable memory (TCAM). Since critical path for switching in the TCAM cell circuit, which determines the performance of the TCAM, is only a single MOS transi...

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Veröffentlicht in:	Journal of applied physics 2012-04, Vol.111 (7), p.07E336-07E336-3
Hauptverfasser:	Matsunaga, Shoun, Katsumata, Akira, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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