Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory
A novel 7-transistor/2-magnetic-tunnel-junction (7T-2MTJ) cell circuit is proposed for a high-speed and compact nonvolatile ternary content-addressable memory (TCAM). Since critical path for switching in the TCAM cell circuit, which determines the performance of the TCAM, is only a single MOS transi...
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Veröffentlicht in: | Journal of applied physics 2012-04, Vol.111 (7), p.07E336-07E336-3 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A novel 7-transistor/2-magnetic-tunnel-junction (7T-2MTJ) cell circuit is proposed for a high-speed and compact nonvolatile ternary content-addressable memory (TCAM). Since critical path for switching in the TCAM cell circuit, which determines the performance of the TCAM, is only a single MOS transistor, switching delay of the TCAM word circuit is minimized. As a result, 270 ps of switching delay in 144-bit TCAM word circuit is achieved under a 90nm CMOS/MTJ technology with magneto-resistance ratio of 100%, which is about two times faster than a conventional CMOS-based TCAM. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.3677875 |