Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory

A novel 7-transistor/2-magnetic-tunnel-junction (7T-2MTJ) cell circuit is proposed for a high-speed and compact nonvolatile ternary content-addressable memory (TCAM). Since critical path for switching in the TCAM cell circuit, which determines the performance of the TCAM, is only a single MOS transi...

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Veröffentlicht in:Journal of applied physics 2012-04, Vol.111 (7), p.07E336-07E336-3
Hauptverfasser: Matsunaga, Shoun, Katsumata, Akira, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro
Format: Artikel
Sprache:eng
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Zusammenfassung:A novel 7-transistor/2-magnetic-tunnel-junction (7T-2MTJ) cell circuit is proposed for a high-speed and compact nonvolatile ternary content-addressable memory (TCAM). Since critical path for switching in the TCAM cell circuit, which determines the performance of the TCAM, is only a single MOS transistor, switching delay of the TCAM word circuit is minimized. As a result, 270 ps of switching delay in 144-bit TCAM word circuit is achieved under a 90nm CMOS/MTJ technology with magneto-resistance ratio of 100%, which is about two times faster than a conventional CMOS-based TCAM.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3677875