Electrical properties of lightly doped p-type silicon–germanium single crystals
Experimental results are presented on the electrical properties of lightly boron doped bulk Si1−xGex as a function of the Ge content x in the range 0
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| Veröffentlicht in: | Journal of applied physics 1998-05, Vol.83 (10), p.5258-5263 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Experimental results are presented on the electrical properties of lightly boron doped bulk Si1−xGex as a function of the Ge content x in the range 0 |
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| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.367348 |