Fast switching of magnetization in the ferromagnetic semiconductor (Ga,Mn)(As,P) using nonequilibrium phonon pulses
We use short acoustic pulses to induce a fast irreversible switching of the magnetization orientation in a layer of (Ga,Mn)(As,P). The pulses are generated by femtosecond optical excitation of a metal transducer film and travel ballistically through the sample. We show that the switching is triggere...
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Veröffentlicht in: | Applied physics letters 2011-12, Vol.99 (26), p.262503-262503-3 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We use short acoustic pulses to induce a fast irreversible switching of the magnetization orientation in a layer of (Ga,Mn)(As,P). The pulses are generated by femtosecond optical excitation of a metal transducer film and travel ballistically through the sample. We show that the switching is triggered by incoherent acoustic phonons, occurs through domain-related processes, and is concluded in ∼35ns. We suggest that the mechanism behind the switching involves the holes in the material being heated due to their coupling to the phonons. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3672029 |