Fast switching of magnetization in the ferromagnetic semiconductor (Ga,Mn)(As,P) using nonequilibrium phonon pulses

We use short acoustic pulses to induce a fast irreversible switching of the magnetization orientation in a layer of (Ga,Mn)(As,P). The pulses are generated by femtosecond optical excitation of a metal transducer film and travel ballistically through the sample. We show that the switching is triggere...

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Veröffentlicht in:Applied physics letters 2011-12, Vol.99 (26), p.262503-262503-3
Hauptverfasser: Casiraghi, A., Walker, P., Akimov, A. V., Edmonds, K. W., Rushforth, A. W., De Ranieri, E., Campion, R. P., Gallagher, B. L., Kent, A. J.
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Sprache:eng
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Zusammenfassung:We use short acoustic pulses to induce a fast irreversible switching of the magnetization orientation in a layer of (Ga,Mn)(As,P). The pulses are generated by femtosecond optical excitation of a metal transducer film and travel ballistically through the sample. We show that the switching is triggered by incoherent acoustic phonons, occurs through domain-related processes, and is concluded in ∼35ns. We suggest that the mechanism behind the switching involves the holes in the material being heated due to their coupling to the phonons.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3672029