Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures

In this paper, we report on observations of the operation of secondary slip systems to relieve lattice mismatch stress in semipolar InGaN/GaN heterostructures. Two-dimensional arrays of misfit dislocations were observed. Consistent with previous reports, primary relaxation occurred along the project...

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Veröffentlicht in:Applied physics letters 2011-12, Vol.99 (25)
Hauptverfasser: Wu, Feng, Young, E. C., Koslow, I., Hardy, M. T., Hsu, P. S., Romanov, A. E., Nakamura, S., DenBaars, S. P., Speck, J. S.
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Sprache:eng
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Zusammenfassung:In this paper, we report on observations of the operation of secondary slip systems to relieve lattice mismatch stress in semipolar InGaN/GaN heterostructures. Two-dimensional arrays of misfit dislocations were observed. Consistent with previous reports, primary relaxation occurred along the projected c direction via primary slip on the (0001) basal plane. In addition, evidence for secondary relaxation was detected in cathodoluminescence spectroscopy, high resolution x-ray diffraction, and transmission electron microscopy (TEM) studies. The secondary misfit dislocations were determined by TEM to have a-type Burgers vectors a/3 〈2¯110〉 and line directions along 〈42¯2¯3¯〉, consistent with prismatic slip on one of the m-type planes inclined with respect to the (112¯2) growth surface. Evidence of an additional slip system with approximate misfit line direction of type 〈202¯3¯〉 is also given.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3671113