Simulation of a submicron 3C–SiC ballistic diode based on the Lei–Ting hydrodynamic balance equations

Simulation of a submicron 3C–SiC ballistic diode based on the Lei–Ting hydrodynamic balance equations

Numerical simulation of a submicron 3C–SiC n+−n−n+ ballistic diode, based upon the recently developed Lei–Ting hydrodynamic balance equations, is presented. The electron velocity, electron density, electron temperature, and the electrical potential distributed along the diode are obtained under diff...

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Veröffentlicht in:Journal of applied physics 1998-03, Vol.83 (6), p.3129-3133
Hauptverfasser: Weng, X. M., Cui, H. L.
Format: Artikel
Sprache:eng
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Zusammenfassung:Numerical simulation of a submicron 3C–SiC n+−n−n+ ballistic diode, based upon the recently developed Lei–Ting hydrodynamic balance equations, is presented. The electron velocity, electron density, electron temperature, and the electrical potential distributed along the diode are obtained under different bias voltages.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.367069