Optical absorption in Hg1−xCdxTe
The theory of optical absorption due to interband transitions in direct-gap semiconductors is revisited. An analytical expression for the linear absorption coefficient in narrow-gap semiconductors is obtained by including the nonparabolic band structure due to Keldysh [Sov. Phys.–JETP 6, 763 (1958)]...
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| Veröffentlicht in: | Journal of applied physics 1998-03, Vol.83 (5), p.2812-2814 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The theory of optical absorption due to interband transitions in direct-gap semiconductors is revisited. An analytical expression for the linear absorption coefficient in narrow-gap semiconductors is obtained by including the nonparabolic band structure due to Keldysh [Sov. Phys.–JETP 6, 763 (1958)] and Burstein–Moss shift. Numerical results are obtained for Hg1−xCdxTe for several values of x and temperature, and compared with recent experimental data. The agreement is found to be good. |
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| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.367040 |