Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors

In this Letter, we described a solution-processed indium-gallium-zinc oxide thin-film transistors (TFTs) with a solution-processed aluminum oxide phosphate gate dielectric, fabricated at a maximum annealing temperature under 350°C to be applicable to conventional fabrication process of flat-panel displays (FPDs). The solution-processed TFTs exhibited competitive device characteristics under 350°C, including a field-effect mobility of 4.50cm 2 /Vs, an on-to-off current ratio of ∼10 9 , a threshold voltage of 2.34V, and a subthreshold gate swing of 0.46V/dec, making them applicable to the future backplane of FPDs.