Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors

In this article we show the effect on the dc and rf transport characteristics of dipole doping at the collector heterojunction in an InP/InGaAs double heterojunction bipolar transistor. We show how the switching characteristics of devices with abrupt undoped InGaAs/InP collector heterojunctions can...

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Veröffentlicht in:Journal of applied physics 1997-11, Vol.82 (10), p.5231-5234
Hauptverfasser: McAlister, S. P., McKinnon, W. R., Driad, R., Renaud, A. P.
Format: Artikel
Sprache:eng
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Zusammenfassung:In this article we show the effect on the dc and rf transport characteristics of dipole doping at the collector heterojunction in an InP/InGaAs double heterojunction bipolar transistor. We show how the switching characteristics of devices with abrupt undoped InGaAs/InP collector heterojunctions can almost be eliminated by using the dipole doping at that interface and how the high-frequency performance is also improved.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.366388