High Q electromechanics with InAs nanowire quantum dots

In this report, we study electromechanical properties of suspended InAs nanowire resonators. At low temperatures, the nanowire acts as the island of a single electron transistor, and a strong coupling between electron transport and mechanical modes is observed for resonant mechanical driving. Further, as a function of the mechanical drive frequency, the conductance exhibits a Fano lineshape. This arises from the interference between two contributions to potential of the single electron transistor coming from capacitively induced charges and the mechanical oscillation. The quality factor ( Q ) of these devices is ∼10 5 at 100mK.