Donor impurity states in wurtzite InGaN staggered quantum wells

Within the framework of the effective-mass approximation, donor impurity states in wurtzite (WZ) InGaN staggered quantum wells (QWs) are investigated theoretically. Numerical results show that the donor binding energy becomes insensitive to the variation of In composition y in the WZ In 0.2 Ga 0.8 N/In y Ga 1−y N staggered QWs when y>0.125 and for any impurity position. Moreover, for the impurity located at the right edge of the In y Ga 1−y N well layer, the donor binding energy has a minimum and it is also insensible to the variation of well width in the staggered QWs when the well width L>3nm.