High-power blue-violet AlGaN-cladding-free m -plane InGaN/GaN laser diodes
We demonstrate AlGaN-cladding-free (ACF) m -plane InGaN/GaN laser diodes (LDs) with peak output powers and estimated front facet optical power densities that are comparable to the state-of-the-art single-stripe emitter c -plane LDs. The threshold current density, slope efficiency, and peak output po...
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| Veröffentlicht in: | Applied physics letters 2011-10, Vol.99 (17), p.171113-171113-3 |
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| container_title | Applied physics letters |
| container_volume | 99 |
| creator | Farrell, R. M. Haeger, D. A. Hsu, P. S. Schmidt, M. C. Fujito, K. Feezell, D. F. DenBaars, S. P. Speck, J. S. Nakamura, S. |
| description | We demonstrate AlGaN-cladding-free (ACF)
m
-plane InGaN/GaN laser diodes (LDs) with peak output powers and estimated front facet optical power densities that are comparable to the state-of-the-art single-stripe emitter
c
-plane LDs. The threshold current density, slope efficiency, and peak output power were 4.66kA/cm
2
, 1.29W/A, and 1.6W, respectively, after facet coating and under pulsed conditions. Catastrophic optical mirror damage was not observed up to an estimated optical power density of 51.2MW/cm
2
at the front mirror facet, indicating the potential for using ACF
m
-plane InGaN/GaN LDs in high-power LD applications. |
| doi_str_mv | 10.1063/1.3656970 |
| format | Article |
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m
-plane InGaN/GaN laser diodes (LDs) with peak output powers and estimated front facet optical power densities that are comparable to the state-of-the-art single-stripe emitter
c
-plane LDs. The threshold current density, slope efficiency, and peak output power were 4.66kA/cm
2
, 1.29W/A, and 1.6W, respectively, after facet coating and under pulsed conditions. Catastrophic optical mirror damage was not observed up to an estimated optical power density of 51.2MW/cm
2
at the front mirror facet, indicating the potential for using ACF
m
-plane InGaN/GaN LDs in high-power LD applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3656970</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2011-10, Vol.99 (17), p.171113-171113-3</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-8edbb0c3700f8386f23bdda869883980df526860db42cc04edc5b3ab3c02879e3</citedby><cites>FETCH-LOGICAL-c350t-8edbb0c3700f8386f23bdda869883980df526860db42cc04edc5b3ab3c02879e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3656970$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Farrell, R. M.</creatorcontrib><creatorcontrib>Haeger, D. A.</creatorcontrib><creatorcontrib>Hsu, P. S.</creatorcontrib><creatorcontrib>Schmidt, M. C.</creatorcontrib><creatorcontrib>Fujito, K.</creatorcontrib><creatorcontrib>Feezell, D. F.</creatorcontrib><creatorcontrib>DenBaars, S. P.</creatorcontrib><creatorcontrib>Speck, J. S.</creatorcontrib><creatorcontrib>Nakamura, S.</creatorcontrib><title>High-power blue-violet AlGaN-cladding-free m -plane InGaN/GaN laser diodes</title><title>Applied physics letters</title><description>We demonstrate AlGaN-cladding-free (ACF)
m
-plane InGaN/GaN laser diodes (LDs) with peak output powers and estimated front facet optical power densities that are comparable to the state-of-the-art single-stripe emitter
c
-plane LDs. The threshold current density, slope efficiency, and peak output power were 4.66kA/cm
2
, 1.29W/A, and 1.6W, respectively, after facet coating and under pulsed conditions. Catastrophic optical mirror damage was not observed up to an estimated optical power density of 51.2MW/cm
2
at the front mirror facet, indicating the potential for using ACF
m
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m
-plane InGaN/GaN laser diodes (LDs) with peak output powers and estimated front facet optical power densities that are comparable to the state-of-the-art single-stripe emitter
c
-plane LDs. The threshold current density, slope efficiency, and peak output power were 4.66kA/cm
2
, 1.29W/A, and 1.6W, respectively, after facet coating and under pulsed conditions. Catastrophic optical mirror damage was not observed up to an estimated optical power density of 51.2MW/cm
2
at the front mirror facet, indicating the potential for using ACF
m
-plane InGaN/GaN LDs in high-power LD applications.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3656970</doi></addata></record> |
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| ispartof | Applied physics letters, 2011-10, Vol.99 (17), p.171113-171113-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3656970 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | High-power blue-violet AlGaN-cladding-free m -plane InGaN/GaN laser diodes |
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