High-power blue-violet AlGaN-cladding-free m -plane InGaN/GaN laser diodes

We demonstrate AlGaN-cladding-free (ACF) m -plane InGaN/GaN laser diodes (LDs) with peak output powers and estimated front facet optical power densities that are comparable to the state-of-the-art single-stripe emitter c -plane LDs. The threshold current density, slope efficiency, and peak output power were 4.66kA/cm 2 , 1.29W/A, and 1.6W, respectively, after facet coating and under pulsed conditions. Catastrophic optical mirror damage was not observed up to an estimated optical power density of 51.2MW/cm 2 at the front mirror facet, indicating the potential for using ACF m -plane InGaN/GaN LDs in high-power LD applications.